Non-Cooled InGaAs Image Sensor for Multichannel Spectrophotometry

High-Performance Design

The image sensors of the G1682x series combine an InGaAs photodiode array with a CMOS chip for stable operation in the near-infrared range from 0.9 to 2.1 µm.
Users benefit from selectable conversion efficiency, uncooled operation with low dark current, and low power consumption.
This allows users to optimize performance via adjustable conversion efficiency and select between two settings (CE = 16 nV/e⁻ and CE = 160 nV/e⁻) using an external voltage. CE stands for Charge-to-Voltage Efficiency. At CE = 16 nV/e⁻, 16 nanovolts are generated for each detected electron (e⁻). This adaptability makes the G1682x series ideal for industrial applications, research and development, as well as OEM requirements.
Unlike previous devices with sensitivity to higher wavelengths that required thermoelectric cooling to reduce dark current, the G1682x series keeps dark current low by operating without bias voltage, eliminating the need for cooling. With an operating voltage of just 3.3 V and pixel sizes of 50 µm × 250 µm on the G16823-128DB sensor and 25 µm × 250 µm on the G16823/G16824/G16825-256DG models, low energy consumption is achieved.